From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
1. Edition February 2016
XXVI, 755 Pages, Hardcover
180 Pictures (50 Colored Figures)
Comprehensive in its coverage, this invaluable, self-contained reference introduces readers to this wide field, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories.
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories.
Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text.
An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
TRANSITION METAL OXIDES
Atomic Structures of Selected Binary, Ternary Oxides
Thermodynamics of Oxidation, Ellingham Diagram
Electronic Structure and Conduction
Unipolar Switching: Forming, Set/Reset Operations
Bipolar Switching: Forming, Set/Reset Operations
Coexistence of Unipolar/Bipolar Switching
Filamentary Switching and Atomic Force Microscopy Analysis
Threshold and Memory Switching
Time Dependence of Set/Reset
Resistance Dependence of Set/Reset
SWITCHING MECHANISMS AND MODELS
Unipolar Switching: Set/Reset Mechanisms and Models
Bipolar Switching: Set/Reset Mechanisms and Models
Modeling of Resistance Dependence (Filament Size and Gap)
Modeling of Time Dependence
Modeling of Set Current Dependence
Overshoot and Parasitic Effects
Material Dependence and Universal Switching
Read Disturb and The Time-Voltage Dilemma
1/f and Random Telegraph Signal Noise
Switching Variability and Set/Reset Algorithms
Reset Current Reduction
MEMORY CELL STRUCTURES
Complementary Resistance Switch (CRS)
Alternative Materials: OxRRAM, PoRRAM, CBRAM
Bottom-Up Approaches: Nanotubes, Nanowires and Self-Assembly
Scaling Issues (Series Resistance, Programming Cross Talk, 3D Stacking Issues)
STDP in Memristor Gates
Rainer Waser is professor at the faculty for Electrical Engineering and Information Technology at the RWTH Aachen University and director at the Peter Grünberg Institute at the Forschungszentrum Jülich (FZJ), Germany. His research group is focused on fundamental aspects of electronic materials and on such integrated devices as nonvolatile memories, logic devices, sensors and actuators.
Professor Waser has published about 500 technical papers. Since 2003, he has been the coordinator of the research program on nanoelectronic systems within the Germany national research centres in the Helmholtz Association. In 2007, he has been co-founder of the Jülich-Aachen Research Alliance, section Fundamentals of Future Information Technology (JARA-FIT). In 2014, he was awarded the Gottfried Wilhelm Leibniz Prize of the Deutsche Forschungsgemeinschaft and the Tsungming Tu Award of the Ministry of Science and Technology of Taiwan.