1. Auflage - April 2004
155,- Euro
2004. 694 Seiten, Softcover
- Handbuch/Nachschlagewerk -
ISBN-10: 0-471-49524-7
ISBN-13: 978-0-471-49524-6 - John Wiley & Sons

Preis inkl. Mehrwertsteuer zzgl. Versandkosten.







Kurzbeschreibung
Crystal growth technology involve processes for the production of crystals and multilayers which are essential for microelectronics, communication technologies, lasers and energy-producing and energy-saving technologies. This title presents a complete survey of this important interdisciplinary field.

Aus dem Inhalt
Contributors.

Preface.

PART 1: GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY.

1. The Development of Crystal Growth Technology (H. J. ScheelI).

Abstract.

References.

2. Thermodynamic Fundamentals of Phase Transitions Applied to Crystal Growth Processes (P. Rudolph).

References.

3. Interface-kinetics-driven Facet Formation During Melt Growth of Oxide Crystals (S. Brandon, A. Virozub and Y. Liu).

Abstract.

Acknowledgments.

Note Added in Proof.

References.

4. Theoretical and Experimental Solutions of the Striation Problem (H. J. Scheel).

Abstract.

References.

5. High-resolution X-Ray Diffraction Techniques for Structural Characterization of Silicon and other Advanced Materials (K. Lal).

References.

6. Computational Simulations of the Growth of Crystals from Liquids (A. Yeckel and J. J. Derby).

Acknowledgments.

References.

7. Heat and Mass Transfer under Magnetic Fields (K. Kakimoto).

Abstract.

Acknowledgment.

References.

8. Modeling of Technologically Important Hydrodynamics and Heat/Mass Transfer Processes during Crystal Growth (V. I. Polezhaev).

Acknowledgments.

References.

PART 2: SILICON.

9. Influence of Boron Addition on Oxygen Behavior in Silicon Melts (K. Terashima).

Abstract.

Acknowledgments.

References.

10. Octahedral Void Defects in Czochralski Silicon (M. Itsumi).

References.

11. The Control and Engineering of Intrinsic Point Defects in Silicon Wafers and Crystals (R. Falster, V. V. Voronkov and P. Mutti).

Abstract.

Acknowledgments.

References.

12. The Formation of Defects and Growth Interface Shapes in CZ Silicon (T. Abe).

Abstract.

References.

13. Silicon Crystal Growth for Photovoltaics (T. F. Ciszek).

References.

PART 3: COMPOUND SEMICONDUCTORS.

14. Fundamental and Technological Aspects of Czochralski Growth of High-quality Semi-insulating GaAs Crystals (P. Rudolph and M. Jurisch).

Acknowledgement.

References.

15. Growth of III-V and II-VI Single Crystals by the Verticalgradient-freeze Method (T. Asahi, K. Kainosho, K. Kohiro, A. Noda, K. Sato and O. Oda).

References.

16. Growth Technology of III-V Single Crystals for Production (T. Kawase, M. Tatsumi and Y. Nishida).

References.

17. CdTe and CdZnTe Growth (R. Triboulet).

References.

PART 4: OXIDES AND HALIDES.

18. Phase-diagram Study for Growing Electro-optic Single Crystals (S. Miyazawa).

Abstract.

Acknowledgment.

References.

19. Melt Growth of Oxide Crystals for SAW, Piezoelectric, and Nonlinear-Optical Applications (K. Shimamura, T. Fukuda and V. I. Chani).

References.

20. Growth of Nonlinear-optical Crystals for Laser-frequency Conversion (T. Sasaki, Y. Mori and M. Yoshimura).

References.

21. Growth of Zirconia Crystals by Skull-Melting Technique (E. E. Lomonova and V. V. Osiko).

Acknowledgments.

References.

22. Shaped Sapphire Production (L. A. Lytvynov).

References.

23. Halogenide Scintillators: Crystal Growth and Performance (A. V. Gektin and B. G. Zaslavsky).

References.

PART 5: CRYSTAL MACHINING.

24. Advanced Slicing Techniques for Single Crystals (C. Hauser and P. M. Nasch).

Abstract.

References.

25. Methods and Tools for Mechanical Processing of Anisotropic Scintillating Crystals (M. Lebeau).

References.

26. Plasma-CVM (Chemical Vaporization Machining) (Y. Mori, K. Yamamura, and Y. Sano).

Acknowledgements.

References.

27. Numerically Controlled EEM (Elastic Emission Machining) System for Ultraprecision Figuring and Smoothing of Aspherical Surfaces (Y. Mori, K. Yamauchi, K. Hirose, K. Sugiyama, K. Inagaki and H. Mimura).

Acknowledgement.

References.

PART 6: EPITAXY AND LAYER DEPOSITION.

28. Control of Epitaxial Growth Modes for High-performance Devices (H. J. Scheel).

Abstract.

General References.

References.

29. High-rate Deposition of Amorphous Silicon Films by Atmospheric pressure Plasma Chemical Vapor Deposition (Y. Mori, H. Kakiuchi, K. Yoshii and K. Yasutake).

Abstract.

Acknowledgements.

References.

Index.