Adachi, Sadao
Properties of Semiconductor Alloys
Group-IV, III-V and II-VI Semiconductors
Wiley Series in Materials for Electronic & Optoelectronic Applications
Edited by Capper, Peter / Kasap, Safa / Willoughby, Arthur
  1. Edition - March 2009
162.- Euro
2009. 422 Pages, Hardcover
- Monograph -
ISBN-10: 0-470-74369-7
ISBN-13: 978-0-470-74369-0 - John Wiley & Sons
Sample Chapter
Short description
The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical, and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys, but also new alloys, such as dilute-carbon alloys, III-N alloys, dilute-nitride alloys, and Mg- or Be-based II-VI semiconductor alloys.
From the contents
Series Preface.
Preface.
Abbreviations and Acronyms.
Introductory Remarks.
A.1 An Alloy and a Compound.
A.2 Grimm-Sommerfeld Rule.
A.3 An Interpolation Scheme.
References.
1 Structural Properties.
1.1 Ionicity.
1.2 Elemental Isotopic Abundance and Molecular Weight.
1.3 Crystal Structure.
1.4 Lattice Constant and Related Parameters.
1.5 Coherent Epitaxy and Strain Problem.
1.6 Structural Phase Transition.
1.7 Cleavage Plane.
References.
2 Thermal Properties.
2.1 Melting Point and Related Parameters.
2.2 Specific Heat.
2.3 Debye Temperature.
2.4 Thermal Expansion Coefficient.
2.5 Thermal Conductivity and Diffusivity.
References.
3 Elastic Properties.
3.1 Elastic Constant.
3.2 Third-order Elastic Constant.
3.3 Young's Modulus, Poisson's Ratio and Similar Properties.
3.4 Microhardness.
3.5 Sound Velocity.
References.
4 Lattice Dynamic Properties.
4.1 Phonon Dispersion Relationships.
4.2 Phonon Frequency.
4.3 Mode Grüneisen Parameter.
5 Collective Effects and Some Response Characteristics.
5.1 Piezoelectric Constant.
5.2 Fröhlich Coupling Constant.
References.
6 Energy-band Structure: Energy-band Gaps.
6.1 Introductory Remarks.
6.2 Group-IV Semiconductor Alloy.
6.3 III-V Semiconductor Ternary Alloy.
6.4 III-V Semiconductor Quaternary Alloy.
6.5 II-VI Semiconductor Alloy.
References.
7 Energy-band Structure: Effective Masses.
7.1 Introductory Remarks.
7.2 Group-IV Semiconductor Alloy.
7.3 III-V Semiconductor Ternary Alloy.
7.4 III-V Semiconductor Quaternary Alloy.
7.5 II-VI Semiconductor Alloy.
7.6 Concluding Remarks.
References.
8 Deformation Potentials.
8.1 Intravalley Deformation Potential: I Point.
8.2 Intravalley Deformation Potential: High-symmetry Points.
8.3 Intervalley Deformation Potential.
References.
9 Heterojunction Band Offsets and Schottky Barrier Height.
9.1 Heterojunction Band Offsets.
9.2 Schottky Barrier Height.
References.
10 Optical Properties.
10.1 Introductory Remarks.
10.2 Group-IV Semiconductor Alloy.
10.3 III-V Semiconductor Ternary Alloy.
10.4 III-V Semiconductor Quaternary Alloy.
10.5 II-VI Semiconductor Alloy.
References.
11 Elasto-optic, Electro-optic and Nonlinear Optical Properties.
11.1 Elasto-optic Effect.
11.2 Linear Electro-optic Constant.
11.3 Quadratic Electro-optic Constant.
11.4 Franz-Keldysh Effect.
11.5 Nonlinear Optical Constant.
References.
12 Carrier Transport Properties.
12.1 Introductory Remarks.
12.2 Low-field Mobility.
12.3 High-field Transport.
12.4 Minority-carrier Transport.
12.5 Impact Ionization Coefficient.
References.
Index.
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