1. Edition - February 2008
175.- Euro
2008. XL, 424 Pages, Hardcover
324 Fig. (28 Colored Fig.), 18 Tab. 
- Monograph -
ISBN-10: 3-527-40768-5
ISBN-13: 978-3-527-40768-2 - Wiley-VCH, Berlin








Short description
This is the first book to discuss in detail the current stage of development of nonpolar nitrides, emphasizing the main topics of crystal growth, properties and device studies. World-class researchers summarize their own recent achievements in their respective fields of expertise

From the contents
INTRODUCTION
1. Nonpolar nitride materials and devices: Recent developments and present trends (T. Paskova)

PART A: GROWTH
2. Nonpolar GaN films grown by HVPE (B. Haskell, P. Fini, S. Nakamura)
3. Nonpolar GaN quasi-wafers sliced from quasi-boules grown by high pressure solution and HVPE (I. Grzegory, M. Bochkowski, B. Lucnik, H. Teisseyre, C. Skierbiszewski, S. Porowski)
4. Heteroepitaxial growth of nonpolar AIN on SiC substrates by plasma-assisted molecular beam epitaxy (J. Suda)
5. MOVPE growth of AI(Ga, In)N on nonpolar/semipolar substrates (H. Amano)
6. GaN films and quantum wells with nonpolar surfaces: Growth and structural properties (O. Brandt)

PART B: PROPERTIES
7. GaN films and quantum wells with nonpolar surfaces: Optical polarization properties (H. T. Grahn)
8. Luminescence properties of nonpolar GaN (P. P. Paskov, B. Monemar)
9. Optical phonons in GaN with nonpolar orientations: Anisotropic lattice distortion, phonon splitting, phonon deformation potentials and strain-free frequencies (V. Darakchieva, T. Paskova, M. Schubert)
10. Defects formed in nonpolar GaN grown on SiC and Al2O3: Structural perfection of laterally overgrown GaN layers (Z. Liliental-Weber, D. N. Zakharov)
11. Interfacial and defect structure of a-plane GaN grown on r-plane sapphire (R. Kroeger)

PART C: NONPOLAR HETEROSTRUCTURES AND DEVICES
12. MOCVD grown nonpolar nitride heterostructures and devices (A. Chakraborty, U. Mishra)
13. MBE growth of nonpolar nitride low-dimensional structures (S. Founta, F. Rol, B. Gayral, B. Daudin)
14. Seminpolar InGaN/GaN quantum wells for highly functional light emitters (F. Funato, Y. Kowakami, Y. Narukawa, T. Mukai)