1. Edition - March 2008
302.- Euro
2008. LIV, 1257 Pages, Hardcover
560 Fig. (51 Colored Fig.), 108 Tab. 
- Handbook/Reference Book -
ISBN-10: 3-527-40837-1
ISBN-13: 978-3-527-40837-5 - Wiley-VCH, Berlin






Sample Chapter



Short description
Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

From the contents
1 General Properties of Nitrides
1.1 Crystal Structure of Nitrides
1.2 Gallium Nitride
1.3 Aluminum Nitride
1.4 Indium Nitride
1.5 Ternary and Quaternary Alloys

2 Electronic Band Structure and Polarization Effects
2.1 Band Structure Calculations
2.2 General Strain Considerations
2.3 Effect of Strain on the Band Structure of GaN
2.4 k_p Theory and the Quasi-Cubic Model
2.5 Quasi-Cubic Approximation
2.6 Temperature Dependence of Wurtzite GaN Bandgap
2.7 Sphalerite (Zinc Blende) GaN
2.8 AlN
2.9 InN
2.10 Band Parameters for Dilute Nitrides
2.11 Confined States
2.12 Polarization Effects
3 Growth and Growth Methods for Nitride Semiconductors

3.1 Substrates for Nitride Epitaxy
3.2 A Primer on Conventional Substrates and their Preparation for Growth
3.3 GaN Epitaxial Relationship to Substrates
3.4 Nitride Growth Techniques
3.5 The Art and Technology of Growth of Nitrides
3.6 Concluding Remarks

4 Extended Defects, Point Defects, Role of Hydrogen, and Doping, Including Transition Metals
4.1 A Primer on Extended Defects
4.2 TEM Analysis of High Nitrogen Pressure (HNP) Solution Growth (HNPSG) and HVPE-Grown GaN
4.3 Point Defects and Autodoping
4.4 Defect Analysis by Deep-Level Transient Spectroscopy
4.5 Minority Carrier Lifetime
4.6 Positron Annihilation
4.7 Fourier Transform Infrared (FTIR), Electron Paramagnetic Resonance, and Optical Detection of Magnetic Resonance
4.8 Role of Hydrogen
4.9 Intentional Doping
4.10 Ion Implantation and Diffusion for Doping
4.11 Summary