1. Edition - March 2003
199.- Euro
2003. XXII, 664 Pages, Hardcover
387 Fig., , 37 Tab. 
- Handbook/Reference Book -
ISBN-10: 3-527-40387-6
ISBN-13: 978-3-527-40387-5 - Wiley-VCH, Berlin









Short description
A systematic and in-depth overview of ceramic semiconductors based on nitrides, on both a high and current level. This collection of review articles offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

From the contents
1. High Pressure Crystallization of GaN (I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, and S. Porowski)

2. Epitaxial Lateral Overgrowth of GaN (P. Gibart, B. Beaumont, and P. Vennéguès)

3. Plasma Assisted Molecular Beam Epitaxy of III-V Nitrides (A. Georgakilas, H. M. Ng, and Ph. Komninou)

4. The Growth of Gallium Nitride by Hydride Vapour Phase Epitaxy (HVPE) (A. Trassoudaine, R. Cadoret and E. Aujol)

5. Growth and Properties of InN (V. Yu. Davydov, A. A. Klochikhin, S. V. Ivanov, I. Aderhold, and A. Yamamoto)

6. Ab initio Analysis of Surface Structures and Adatom Kinetics of Group-III Nitrides (J. Neugebauer)

7. Topological Analysis of Defects in Nitride Semiconductors (G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and R. C. Pond)

8. Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation and Interaction Mechanisms (P. Ruterana, A. M. Sánchez, and G. Nouet)

9. Stain, Chemical Composition and Defects Analysis at Atomical Level in GaN Based Epitaxial Layers (S. Kret, P. Ruterana, C. Delamarre, T. Benabbas, and P. Dluzewski)

10. Ohmic Contacts to GaN (P. J. Hartlieb, R. J. Nemanich, and R.F. Davis)

11. Electroluminescent Diodes and Laser Diodes (H. Amano)

12. GaN-based Modulation Doped FETs and Heterojunction Bipolar Transistors ( H. Morkoç, L. Liu)

13. GaN Based UV Photodetectors (Franck Omnes, Eva Monroy)