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Friedrichs, Peter / Kimoto, Tsunenobu / Ley, Lothar / Pensl, Gerhard (eds.)
Silicon Carbide
Volume 2: Power Devices and Sensors

1. Edition - October 2009
132.- Euro
2009. XX, 500 Pages, Hardcover
405 Fig., 35 Tab. 
- Monograph -
ISBN-10: 3-527-40997-1
ISBN-13: 978-3-527-40997-6 - Wiley-VCH, Berlin


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Short description
An overview of current applications of SiC. This volume provides latest information on power electronics, sensors, and NEMS and their applications in the renewable energy or automotive industry sector.

From the contents
1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
2) Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application
3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
4) Reliability aspects of SiC Schottky Diodes
5) Design, process, and performance of all-epitaxial normally-off SiC JFETs
6) Extreme Temperature SiC Integrated Circuit Technology
7) 1200 V SiC Vertical-channel-JFET based cascode switches
8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
10) 4H-SiC MISFETs with Nitrogen-containing Insulators
11) SiC Inversion Mobility
12) Development of SiC diodes, power MOSFETs and intellegent Power Modules
13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation
14) Application of SiC-Transistors in Photovoltaic-Inverters
15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs
16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs
17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection


 
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