Friedrichs, Peter / Kimoto, Tsunenobu / Ley, Lothar / Pensl, Gerhard (eds.) Silicon Carbide Volume 2: Power Devices and Sensors
  1. Edition - October 2009 132.- Euro 2009. XX, 500 Pages, Hardcover 405 Fig., 35 Tab. - Monograph - ISBN-10: 3-527-40997-1 ISBN-13: 978-3-527-40997-6 - Wiley-VCH, Berlin

Content
Sample Chapter
Short description An overview of current applications of SiC. This volume provides latest information on power electronics, sensors, and NEMS and their applications in the renewable energy or automotive industry sector.
From the contents 1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices 2) Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application 3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts 4) Reliability aspects of SiC Schottky Diodes 5) Design, process, and performance of all-epitaxial normally-off SiC JFETs 6) Extreme Temperature SiC Integrated Circuit Technology 7) 1200 V SiC Vertical-channel-JFET based cascode switches 8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors 9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen 10) 4H-SiC MISFETs with Nitrogen-containing Insulators 11) SiC Inversion Mobility 12) Development of SiC diodes, power MOSFETs and intellegent Power Modules 13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation 14) Application of SiC-Transistors in Photovoltaic-Inverters 15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs 16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs 17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection
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