on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (–1.6 to 1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflection high energy electron diffraction and grazing angle X-ray diffraction. (G. Riveros, D. Lincot, et al., September 16, Adv. Mater. 2002, 14, 1286-1290)