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physica status solidi (a)
No. 182, 2000
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 |  |  | H. Föll, J. Carstensen, M. Christophersen, G. Hasse |
| A New View of Silicon Electrochemistry |
| phys. stat. sol. (a) 2000, 182, No. 1, 7-16 | | |
| S. Lust, C. Lévy-Clément |
| Macropore Formation on Medium Doped p-Type Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 17-21 | | |
| G. Hasse, M. Christophersen, J. Carstensen, H. Föll |
| New Insights into Si Electrochemistry and Pore Growth by Transient Measurements and Impedance Spectroscopy |
| phys. stat. sol. (a) 2000, 182, No. 1, 23-29 | | |
| S. Fellah, N. Gabouze, F. Ozanam, J.-N. Chazalviel, K. Beldjilali |
| Pit Formation on p-Si during Hydrogen Evolution in HF Electrolyte |
| phys. stat. sol. (a) 2000, 182, No. 1, 31-36 | | |
| V. Parkhutik, E. Matveeva |
| Electrochemical Impedance Characterization of Transient Effects in Anodic Oxidation of Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 37-44 | | |
| M. Christophersen, J. Carstensen, H. Föll |
| Macropore Formation on Highly Doped n-Type Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 45-50 | | |
| P. Schmuki, L. Santinacci, T. Djenizian, D.J. Lockwood |
| Pore Formation on n-InP |
| phys. stat. sol. (a) 2000, 182, No. 1, 51-61 | | |
| J. Carstensen, M. Christophersen, G. Hasse, H. Föll |
| Parameter Dependence of Pore Formation in Silicon within a Model of Local Current Bursts |
| phys. stat. sol. (a) 2000, 182, No. 1, 63-69 | | |
| Y.H. Ogata, J. Sasano, J. Jorne, T. Tsuboi, F.A. Harraz, T. Sakka |
| Immersion Plating of Copper on Porous Silicon in Various Solutions |
| phys. stat. sol. (a) 2000, 182, No. 1, 71-77 | | |
| R. Fenollosa, V. Parkhutik, B.J. García, R.M. Almazán |
| The Role of Stress and Percolation Effects on the Anodic Silicon Oxides Growth Mechanism |
| phys. stat. sol. (a) 2000, 182, No. 1, 79-86 | | |
| A. Wellner, L. Koker, K.W. Kolasinski, M. Aindow, R.E. Palmer |
| The Effect of Etchant Composition on Film Structure during Laser-Assisted Porous Si Growth |
| phys. stat. sol. (a) 2000, 182, No. 1, 87-91 | | |
| V.V. Starkov, E.A. Starostina, A.F. Vyatkin, V.T. Volkov |
| Dielectric Porous Layer Formation in Si and Si/Ge by Local Stain Etching |
| phys. stat. sol. (a) 2000, 182, No. 1, 93-96 | | |
| C.S. Solanki, R.R. Bilyalov, H. Bender, J. Poortmans |
| New Approach for the Formation and Separation of a Thin Porous Silicon Layer |
| phys. stat. sol. (a) 2000, 182, No. 1, 97-101 | | |
| M. Christophersen, J. Carstensen, H. Föll |
| Crystal Orientation Dependence of Macropore Formation in p-Type Silicon Using Organic Electrolytes |
| phys. stat. sol. (a) 2000, 182, No. 1, 103-107 | | |
| M.P. Stewart, E.G. Robins, T.W. Geders, M.J. Allen, H. Cheul Choi, J.M. Buriak |
| Three Methods for Stabilization and Functionalization of Porous Silicon Surfaces via Hydrosilylation and Electrografting Reactions |
| phys. stat. sol. (a) 2000, 182, No. 1, 109-115 | | |
| R. Boukherroub, S. Morin, D.D.M. Wayner, D.J Lockwood |
| Thermal Route for Chemical Modification and Photoluminescence Stabilization of Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 117-121 | | |
| J. Salonen, V.-P. Lehto, M. Björkqvist, E. Laine, L. Niinistö |
| Studies of Thermally-Carbonized Porous Silicon Surfaces |
| phys. stat. sol. (a) 2000, 182, No. 1, 123-126 | | |
| T. Ehara, T. Arai |
| Defect Structure of Nitrogen Plasma Treated Porous Silicon Studied Using Electron Paramagnetic Resonance |
| phys. stat. sol. (a) 2000, 182, No. 1, 127-131 | | |
| K. Kimoto, T. Arai |
| Photoluminescence of Rapid Thermal Treated Porous Si in Nitrogen Atmosphere |
| phys. stat. sol. (a) 2000, 182, No. 1, 133-137 | | |
| G. Mattei, E.V. Alieva, J.E. Petrov, V.A. Yakovlev |
| Quick Oxidation of Porous Silicon in Presence of Pyridine Vapor |
| phys. stat. sol. (a) 2000, 182, No. 1, 139-143 | | |
| E.V. Astrova, V.B. Voronkov, I.V. Grekhov, A.V. Nashchekin, A.G. Tkachencko |
| Deep Diffusion Doping of Macroporous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 145-150 | | |
| R. Könenkamp, K. Ernst, Ch.-H. Fischer, M.C. Lux-Steiner, C. Rost |
| Semiconductor Growth and Junction Formation within Nano-Porous Oxides |
| phys. stat. sol. (a) 2000, 182, No. 1, 151-155 | | |
| I. Coulthard, R. Sammynaiken, S.J. Naftel, P. Zhang, T.K. Sham |
| Semiconductor Growth and Junction Formation within Nano-Porous Oxides |
| phys. stat. sol. (a) 2000, 182, No. 1, 157-162 | | |
| V.Yu. Timoshenko, V. Lysenko, Th. Dittrich, F. Koch |
| Electrical Conductivity of Meso-Porous Si: Effects of the Condensation of Polar Liquids |
| phys. stat. sol. (a) 2000, 182, No. 1, 163-168 | | |
| Thien-Phap Nguyen, P. Joubert, P. Destruel, Ph. Le Rendu, M. Lakéhal |
| Study of the Porous Silicon-Poly(p Phenylene-Vinylene) Systems |
| phys. stat. sol. (a) 2000, 182, No. 1, 169-174 | | |
| A. Gokarna, S.V. Bhoraskar, N.R. Pavaskar, S.D. Sathaye |
| Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems |
| phys. stat. sol. (a) 2000, 182, No. 1, 175-179 | | |
| V. Baranauskas, A.C. Peterlevitz, B.B. Li, M.C. Tosin, H.J. Ceragioli, S.F. Durrant |
| The Growth of Diamond Films on Laser-Etched Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 181-187 | | |
| A. Missaoui, M. Saadoun, H. Ezzaouia, B. Bessaïs, T. Boufaden, A. Rebey, B. El Jani |
| Growth of GaN Films on Porous Silicon by MOVPE |
| phys. stat. sol. (a) 2000, 182, No. 1, 189-193 | | |
| V. Yakovtseva, N. Vorozov, L. Dolgyi, V. Levchenko, L. Postnova, M. Balucani, V. Bondarenko, G. Lamedica, V. Ferrara, A. Ferrari |
| Porous Silicon: A Buffer Layer for PbS Heteroepitaxy |
| phys. stat. sol. (a) 2000, 182, No. 1, 195-199 | | |
| H.E. Porteanu, V.Yu. Timoshenko, Th. Dittrich, F. Koch |
| Microwave Conductivity and Raman Spectroscopy of Porous TiO2 |
| phys. stat. sol. (a) 2000, 182, No. 1, 201-206 | | |
| A. Sarua, G. Gärtner, G. Irmer, J. Monecke, I.M. Tiginyanu, H.L. Hartnagel |
| Raman and IR-Reflectance Spectra of Porous III-V Semiconductor Structures |
| phys. stat. sol. (a) 2000, 182, No. 1, 207-211 | | |
| S. Zangooie, H. Arwin |
| Porous Anodic 4H-SiC: Thickness Dependent Anisotropy in Pore Propagation and Ellipsometric Characterization |
| phys. stat. sol. (a) 2000, 182, No. 1, 213-219 | | |
| S.P. Zimin, D.S. Zimin, Yu.V. Ryabkin, A.N. Bragin |
| Electron Irradiation Influence on Porous Silicon Electrical Parameters |
| phys. stat. sol. (a) 2000, 182, No. 1, 221-225 | | |
| V.Yu. Timoshenko, V. Duzhko, Th. Dittrich |
| Diffusion Photovoltage in Porous Semiconductors and Dielectrics |
| phys. stat. sol. (a) 2000, 182, No. 1, 227-232 | | |
| N. Happo, M. Iwamatsu, K. Horii |
| Self-Affine Fractal of Porous Silicon Surfaces before and after Natural Oxidization |
| phys. stat. sol. (a) 2000, 182, No. 1, 233-237 | | |
| M. Draghici, M. Miu, V. Iancu, A. Nassiopoulou, I. Kleps, A. Angelescu, M.L. Ciurea |
| Oxidation-Induced Modifications of Trap Parameters in Nanocrystalline Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 239-243 | | |
| S. Manotas, F. Agulló-Rueda, J.D. Moreno, F. Ben-Hander, R. Guerrero-Lemus, J.M. Martínez-Duart |
| Determination of Stress in Porous Silicon by Micro-Raman Spectroscopy |
| phys. stat. sol. (a) 2000, 182, No. 1, 245-248 | | |
| J. Salonen, M. Björkqvist, E. Laine, L. Niinistö |
| Effects of Fabrication Parameters on Porous p+-Type Silicon Morphology |
| phys. stat. sol. (a) 2000, 182, No. 1, 249-254 | | |
| P. Martín, J.F. Fernández, C.R. Sánchez |
| TDS Applied to Investigate the Hydrogen and Silane Desorption from Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 255-260 | | |
| F. De Filippo, C. De Lisio, P. Maddalena, G. Lérondel, C. Altucci |
| Measurement of Porous Silicon Dielectric Constant by VUV Laser Harmonic Radiation |
| phys. stat. sol. (a) 2000, 182, No. 1, 261-266 | | |
| W. Li, I. Andrienko, D. Haneman |
| High Resolution Surface Structure of Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 267-270 | | |
| F. Pászti, G. Battistig |
| Ion Beam Characterisation and Modification of Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 271-278 | | |
| M. Biasini, G. Ferro, M.A. Monge, G. Di Francia, V. La Ferrara |
| Study of the Structure of Porous Silicon via Positron Annihilation Experiments |
| phys. stat. sol. (a) 2000, 182, No. 1, 279-284 | | |
| D. Ninno, F. Buonocore, G. Cantele, G. Iadonisi |
| Impurity and Topological Surface States in Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 285-289 | | |
| J. Tagüeña-Martínez, J.A. del Río, J.E. Lugo |
| Effective Medium Correlations for Experimental Absorption Data |
| phys. stat. sol. (a) 2000, 182, No. 1, 291-295 | | |
| M.G. Lisachenko, E.A. Konstantinova, P.K. Kashkarov, V.Yu. Timoshenko |
| Dielectric Effect in Silicon Quantum Wires |
| phys. stat. sol. (a) 2000, 182, No. 1, 297-300 | | |
| Elena Degoli, Marcello Luppi, Stefano Ossicini |
| From Undulating Si Quantum Wires to Si Quantum Dots: A Model for Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 301-306 | | |
| A.G. Nassiopoulou, G. Kaltsas |
| Porous Silicon as an Effective Material for Thermal Isolation on Bulk Crystalline Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 307-311 | | |
| G. Müller, R. Brendel |
| Simulated Annealing of Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 313-318 | | |
| Y. Zhou, P.A. Snow, P.St.J. Russell |
| The Effect of Thermal Processing on Multilayer Porous Silicon Microcavity |
| phys. stat. sol. (a) 2000, 182, No. 1, 319-324 | | |
| V.Yu. Timoshenko, Th. Dittrich, I. Sieber, J. Rappich, B.V. Kamenev, P.K. Kashkarov |
| Laser-Induced Melting of Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 325-330 | | |
| S. Manotas, F. Agulló-Rueda, J.D. Moreno, F. Ben-Hander, R. Guerrero-Lemus, J.M. Martínez-Duart |
| Laser Heating in Porous Silicon Studied by Micro-Raman Spectroscopy |
| phys. stat. sol. (a) 2000, 182, No. 1, 331-334 | | |
| G.G. Qin, G. Qin |
| Multiple Mechanism Model for Photoluminescence from Oxidized Porous Si |
| phys. stat. sol. (a) 2000, 182, No. 1, 335-339 | | |
| J. Diener, D. Kovalev, G. Polisski, F. Koch |
| Dielectric Effects in the Photoluminescence from Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 341-345 | | |
| K. Chernoutsan, V. Dneprovskii, O. Shaligina, E. Zhukov |
| Time-Resolved Luminescence of Porous Si and InP |
| phys. stat. sol. (a) 2000, 182, No. 1, 347-352 | | |
| J.X. Shi, X.X. Zhang, M.L. Gong, J.Y. Zhou, K.W. Cheah, W.K. Wong |
| Photoluminescence of Erbium, Zinc and Copper Doped Porous Silicon and a Phenomenological Model for the Metal Electrodeposition |
| phys. stat. sol. (a) 2000, 182, No. 1, 353-357 | | |
| S.T. Wang, Dongsheng Xu, Guolin Guo, G.G. Qin |
| Photoluminescence and Raman Spectroscopy Study on Oxidized Free-Standing Porous Si |
| phys. stat. sol. (a) 2000, 182, No. 1, 359-362 | | |
| J.X. Meng, T.K. Li, W.K. Wong, K.W. Cheah |
| Doping of Porous Silicon with Terbium Organic Complex |
| phys. stat. sol. (a) 2000, 182, No. 1, 363-366 | | |
| S. Fellah, F. Ozanam, N. Gabouze, J.-N. Chazalviel |
| Porous Silicon in Solvents: Constant-Lifetime PL Quenching and Confirmation of Dielectric Effects |
| phys. stat. sol. (a) 2000, 182, No. 1, 367-372 | | |
| S.J. Naftel, I. Coulthard, D.T. Jiang, T.K. Sham, B.W. Yates, K.H. Tan |
| The Role of Oxygen in the Photoluminescence of Porous Silicon: Some Recent Observations |
| phys. stat. sol. (a) 2000, 182, No. 1, 373-378 | | |
| N. Künzer, D. Kovalev, J. Diener, H. Heckler, G. Polisski, F. Koch |
| Joint Density of Electronic States in Silicon Nanocrystals |
| phys. stat. sol. (a) 2000, 182, No. 1, 379-383 | | |
| V. Agarwal, K. Sehrawat, P.C. Mathur, R.M. Mehra |
| Analysis of the Shape of PL Spectra and Its Temperature Dependence in Self-Supporting Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 385-388 | | |
| Dongsheng Xu, Guolin Guo, Linlin Gui, Youqi Tang, B.R Zhang, G.G Qin |
| Correlation between the H+ Concentration in the Electrolyte and the Photoluminescence of Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 389-394 | | |
| V. Baranauskas, M.C. Tosin, H.J. Ceragioli, J.G. Zhao, A.C. Peterlevitz, S.F. Durrant |
| Photoluminescent Properties of Porous Carbon Films Pyrolised on Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 395-400 | | |
| A. Misiuk, H.B. Surma, J. Bak-Misiuk, A. Romano-Rodriguez, A. Wnuk, A. Brzozowski, A. Bachrouri, A. Barcz |
| Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si |
| phys. stat. sol. (a) 2000, 182, No. 1, 401-406 | | |
| Z. Gaburro, P. Bellutti, L. Pavesi |
| CMOS Fabrication of a Light Emitting Diode Based on Silicon/Porous Silicon Heterojunction |
| phys. stat. sol. (a) 2000, 182, No. 1, 407-412 | | |
| H.A. Lopez, P.M. Fauchet |
| 1.54 μm Electroluminescence from Erbium-Doped Porous Silicon Composites for Photonic Applications |
| phys. stat. sol. (a) 2000, 182, No. 1, 413-418 | | |
| A. Givant, J. Shappir, A. Sa'ar |
| Porous Silicon on Insulator: A New Approach to Fabricate Porous Silicon Based Optoelectronic Devices |
| phys. stat. sol. (a) 2000, 182, No. 1, 419-424 | | |
| G. Amato, L. Boarino, S. Borini, A.M. Rossi |
| Hybrid Approach to Porous Silicon Integrated Waveguides |
| phys. stat. sol. (a) 2000, 182, No. 1, 425-430 | | |
| J. Charrier, M. Guendouz, L. Haji, P. Joubert |
| Porosity Gradient Resulting from Localised Formation of Porous Silicon: The Effect on Waveguiding |
| phys. stat. sol. (a) 2000, 182, No. 1, 431-436 | | |
| L.A. Golovan, P.K. Kashkarov, M.S. Syrchin, A.M. Zheltikov |
| One-Dimensional Porous-Silicon Photonic Band-Gap Structures with Tunable Reflection and Dispersion |
| phys. stat. sol. (a) 2000, 182, No. 1, 437-442 | | |
| S. Uehara, K. Taira, T. Hashimoto, H. Sasabu, T. Matsubara |
| Porous Silicon Refractive Index Lattices |
| phys. stat. sol. (a) 2000, 182, No. 1, 443-446 | | |
| Th. Dittrich |
| Porous TiO2: Electron Transport and Application to Dye Sensitized Injection Solar Cells |
| phys. stat. sol. (a) 2000, 182, No. 1, 447-455 | | |
| Z. Matic, R.R. Bilyalov, J. Poortmans |
| Firing through Porous Silicon Antireflection Coating for Silicon Solar Cells |
| phys. stat. sol. (a) 2000, 182, No. 1, 457-460 | | |
| S. Uehara, K. Kurose, T. Matsubara |
| Wide Bandwidth Porous Silicon Coatings for Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 461-464 | | |
| L. Boarino, M. Rocchia, C. Baratto, A.M. Rossi, E. Garrone, S. Borini, F. Geobaldo, E. Comini, G. Faglia, G. Sberveglieri, G. Amato |
| Towards a Deeper Comprehension of the Interaction Mechanisms between Mesoporous Silicon and NO2 |
| phys. stat. sol. (a) 2000, 182, No. 1, 465-471 | | |
| L. Quercia, F. Cerullo, V. La Ferrara, G. Di Francia, C. Baratto, G. Fagilia |
| Fabrication and Characterization of a Sensing Device Based on Porous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 473-477 | | |
| V. Mulloni, Z. Gaburro, L. Pavesi |
| Porous Silicon Microcavities as Optical and Electrical Chemical Sensors |
| phys. stat. sol. (a) 2000, 182, No. 1, 479-484 | | |
| J. Dian, T. Holec, I. Jelínek, J. Jindrich, J. Valenta, I. Pelant |
| Time Evolution of Photoluminescence Response from Porous Silicon in Hydrocarbon Gas Sensing |
| phys. stat. sol. (a) 2000, 182, No. 1, 485-488 | | |
| R. De Rosa, G. Di Francia, V. La Ferrara, L. Quercia, F. Roca, M. Tucci |
| Amorphous-Porous Silicon Heterojunction for Gas Sensor Application |
| phys. stat. sol. (a) 2000, 182, No. 1, 489-493 | | |
| M. Bengtsson, S. Ekström, J. Drott, A. Collins, E. Csöregi, G. Marko-Varga, T. Laurell |
| Applications of Microstructured Porous Silicon as a Biocatalytic Surface |
| phys. stat. sol. (a) 2000, 182, No. 1, 495-504 | | |
| A.H. Mayne, S.C. Bayliss, P. Barr, M. Tobin, L.D. Buckberry |
| Biologically Interfaced Porous Silicon Devices |
| phys. stat. sol. (a) 2000, 182, No. 1, 505-513 | | |
| H. Arwin, M. Gavutis, J. Gustafsson, M. Schultzberg, S. Zangooie, P. Tengvall |
| Protein Adsorption in Thin Porous Silicon Layers |
| phys. stat. sol. (a) 2000, 182, No. 1, 515-520 | | |
| L.T. Canham, M.P. Stewart, J.M. Buriak, C.L. Reeves, M. Anderson, E.K. Squire, P. Allcock, P.A. Snow |
| Derivatized Porous Silicon Mirrors: Implantable Optical Components with Slow Resorbability |
| phys. stat. sol. (a) 2000, 182, No. 1, 521-525 | | |
| A. Rosengren, L. Wallman, M. Bengtsson, Th. Laurell, N. Danielsen, L.M. Bjursten |
| Tissue Reactions to Porous Silicon: A Comparative Biomaterial Study |
| phys. stat. sol. (a) 2000, 182, No. 1, 527-531 | | |
| M. Bengtsson, J. Drott, Th. Laurell |
| Tailoring of Porous Silicon Morphology in Chip Integrated Bioreactors |
| phys. stat. sol. (a) 2000, 182, No. 1, 533-539 | | |
| S. Chan, P.M. Fauchet, Y. Li, L.J. Rothberg, B.L. Miller |
| Porous Silicon Microcavities for Biosensing Applications |
| phys. stat. sol. (a) 2000, 182, No. 1, 541-546 | | |
| A.M. Tinsley-Bown, L.T. Canham, M. Hollings, M.H. Anderson, C.L. Reeves, T.I. Cox, S. Nicklin, D.J. Squirrell, E. Perkins, A. Hutchinson, M.J. Sailor, A. Wun |
| Tuning the Pore Size and Surface Chemistry of Porous Silicon for Immunoassays |
| phys. stat. sol. (a) 2000, 182, No. 1, 547-553 | | |
| T. Jay, L.T. Canham, K. Heald, C.L. Reeves, R. Downing |
| Autoclaving of Porous Silicon within a Hospital Environment: Potential Benefits and Problems |
| phys. stat. sol. (a) 2000, 182, No. 1, 555-560 | | |
| M. Christophersen, P. Merz, J. Quenzer, J. Carstensen, H. Föll |
| A New Way to Silicon Microstructuring with Electrochemical Etching |
| phys. stat. sol. (a) 2000, 182, No. 1, 561-566 | | |
| M. Takahashi, Y. Toriumi, N. Koshida |
| Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators |
| phys. stat. sol. (a) 2000, 182, No. 1, 567-571 | | |
| M.V. Wolkin, S. Chan, P.M. Fauchet |
| Porous Silicon Encapsulated Nematic Liquid Crystals for Electro-Optic Applications |
| phys. stat. sol. (a) 2000, 182, No. 1, 573-578 | | |
| K. Ueno, N. Koshida |
| Optical Accessibility of Light-Emissive Nanosilicon Memory |
| phys. stat. sol. (a) 2000, 182, No. 1, 579-583 | | |
| F. Müller, A. Birner, J. Schilling, U. Gösele, Ch. Kettner, P. Hänggi |
| Membranes for Micropumps from Macroporous Silicon |
| phys. stat. sol. (a) 2000, 182, No. 1, 585-590 | | |
| V.P. Parkhutik, L.T. Canham |
| Porous Silicon as an Educational Vehicle for Introducing Nanotechnology and Interdisciplinary Materials Science |
| phys. stat. sol. (a) 2000, 182, No. 1, 591-598 | | |
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