John Wiley & Sons Molecular Beam Epitaxy Cover Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert res.. Product #: 978-1-119-35501-4 Regular price: $195.33 $195.33 Auf Lager

Molecular Beam Epitaxy

Materials and Applications for Electronics and Optoelectronics

Asahi, Hajime / Horikoshi, Yoshiji (Herausgeber)

Wiley Series in Materials for Electronic & Optoelectronic Applications

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1. Auflage April 2019
512 Seiten, Hardcover
Wiley & Sons Ltd

ISBN: 978-1-119-35501-4
John Wiley & Sons

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Covers both the fundamentals and the state-of-the-art technology used for MBE

Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications.

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III-V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more.
* Includes chapters on the fundamentals of MBE
* Covers new challenging researches in MBE and new technologies
* Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners
* Part of the Materials for Electronic and Optoelectronic Applications series

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Series Editors

Arthur Willoughby University of Southampton, Southampton, UK

Peter Capper formerly of SELEX Galileo Infrared Ltd, Southampton, UK

Safa Kasap University of Saskatchewan, Saskatoon, Canada

Edited by Hajime Asahi Emeritus Professor, Osaka University, Japan

Yoshiji Horikoshi Emeritus Professor, Waseda University, Tokyo, Japan