Fundamentals of Terahertz Devices and Applications
1. Auflage August 2021
576 Seiten, Hardcover
Wiley & Sons Ltd
ISBN:
978-1-119-46071-8
John Wiley & Sons
Weitere Versionen
An authoritative and comprehensive guide to the devices and applications of Terahertz technology
Terahertz (THz) technology relates to applications that span in frequency from a few hundred GHz to more than 1000 GHz. Fundamentals of Terahertz Devices and Applications offers a comprehensive review of the devices and applications of Terahertz technology. With contributions from a range of experts on the topic, this book contains in a single volume an inclusive review of THz devices for signal generation, detection and treatment.
Fundamentals of Terahertz Devices and Applications offers an exploration and addresses key categories and aspects of Terahertz Technology such as: sources, detectors, transmission, electronic considerations and applications, optical (photonic) considerations and applications. Worked examples?based on the contributors? extensive experience? highlight the chapter material presented. The text is designed for use by novices and professionals who want a better understanding of device operation and use, and is suitable for instructional purposes This important book:
* Offers the most relevant up-to-date research information and insight into the future developments in the technology
* Addresses a wide-range of categories and aspects of Terahertz technology
* Includes material to support courses on Terahertz Technology and more
* Contains illustrative worked examples
Written for researchers, students, and professional engineers, Fundamentals of Terahertz Devices and Applications offers an in-depth exploration of the topic that is designed for both novices and professionals and can be adopted for instructional purposes.
About the Editor
Acknowledgements [still to follow]
Chapter 1: Introduction to THz Technologies
Dimitris Pavlidis
Chapter 2: THz Antennas
Maria Alonso-delPino and Nuria Llombart Juan
Introduction
Elliptical Lens Antennas
2.1 Elliptical Lens Synthesis
2.2 Radiation of Elliptical Lenses
2.2.1 Transmission function T (Q)
2.2.2 Spreading Factor S(Q)
2.2.3 Equivalent Current Distribution and Far-Field Calculation
2.2.4 Lens Reflection Efficiency
3. Extended Semi-Hemispherical lens antennas
3. 1 Radiation of extended semi-hemispherical lenses
4. Shallow Lenses excited by leaky wave /Fabry-Perot feeds
4.1.Analysis of the leaky-wave propagation constant
4.2 Primary fields radiated by a leaky-wave antenna feed on an infinite medium
4.3 Shallow-Lens geometry optimization
5. Fly-eye Antenna Array
5.1 Silicon DRIE micromachining process at submillimeter-wave frequencies
5.1.1 Fabrication of silicon lenses using DRIE
5.1.2 Surface Accuracy
5.2 Examples of fabricated antennas
Chapter 3: Photoconductive THz Sources Driven at 1550 nm
E.R. Brown, G. Carpintero del Barrio, A. Rivera, D. Segovia-Vargas, B. Globisch, and A. Steiger
I. Introduction
Overview of THz Photoconductive Sources
Lasers and Fiber Optics
II. 1550-nm THz photoconductive sources
II.A. Epitaxial Materials
Bandgap Engineering
Low Temperature Growth
II.B. Device Types and Modes of Operation
II.C. Analysis of THz photoconductive sources
II.C.1. PC-Switch Analysis
II.C.2. Photomixer Analysis
II.C.2.a. p-i-n photodiode
II.C.2.b. MSM bulk photoconductor
II.D. Practical Issues
Contact Effects
Thermal Effects
Circuit Limitations
III. THz Metrology
Power Measurements
A Traceable Power Sensor
Exemplary THz Power Measurement Exercise
Other Sources of Error
Frequency Metrology
IV. THz Antenna Coupling
Fundamental Principles
Planar antennas on dielectric substrates
Input Impedance
DeltaEIRP (increase in the EIRP of the transmitting antenna)
G/T or Aeff/T
Estimation of Power Coupling Factor
Exemplary THz Planar Antennas
Resonant antennas
Quick survey of self-complementary antennas
V. State-of-the-Art in 1550-nm Photoconductive Sources Error! Bookmark not defined.
1550-nm MSM Photoconductive Switches
Material and Device Design
THz Performance
1550-nm Photodiode CW (photomixer) Sources
Material and Device Design
THz Performance
VI. Alternative 1550-nm THz Photoconductive Sources Error! Bookmark not defined.
Fe-Doped InGaAs
ErAs Nanoparticles in GaAs: Extrinsic Photoconductivity
VII. System Applications Error! Bookmark not defined.
Comparison between pulsed and cw THz systems
Device aspects
Systems aspects
Wireless Communications
THz Spectroscopy
Time vs Frequency Domain Systems
Analysis of Frequency Domain Systems: Amplitude and Phase Modulation
Exercises
Chapter 4 : THz Photomixers
E. Peytavit, G. Ducournau, J-F. Lampin
1. Introduction
2. Elliptical Lens Antennas
2.1 Elliptical Lens Synthesis
2.2 Radiation of Elliptical Lenses
2.2.1 Transmission function TQ
2.2.2 Spreading Factor SQ
2.2.3 Equivalent Current Distribution and Far-Field Calculation
2.2.4 Lens Reflection Efficiency
3. Extended Semi-Hemispherical lens antennas
3. 1 Radiation of extended semi-hemispherical lenses
4. Shallow Lenses excited by leaky wave /Fabry-Perot feeds
4.1.Analysis of the leaky-wave propagation constant
4.2 Primary fields radiated by a leaky-wave antenna feed on an infinite medium
4.3 Shallow-Lens geometry optimization
5. Fly-eye Antenna Array
5.1 Silicon DRIE micromachining process at submillimeter-wave frequencies
5.1.1 Fabrication of silicon lenses using DRIE
5.1.2 Surface Accuracy
5.2 Examples of fabricated antennas
Chapter 5: Plasmonics-enhanced Photoconductive Terahertz Devices
Ping Keng Lu and Mona Jarrahi
Introduction
Photoconductive Antennas
Photoconductors for THz operation
Photoconductive THz emitters
Pulsed THz emitters
Continuous-wave THz emitters
Photoconductive THz Detectors
Common photoconductors and antennas for photoconductive THz devices
Plasmonics-enhanced photoconductive antennas
Fundamentals of plasmonics
Plasmonics for enhancing performance of photoconductive THz devices
Principles of plasmonic enhancement
Design considerations for plasmonic nanostructures
State-of-the-art plasmonics-enhanced photoconductive THz devices
Photoconductive THz devices with plasmonic contact electrodes
Large area plasmonic photoconductive nanoantenna arrays
Plasmonic photoconductive THz devices with optical nanocavities
Conclusion and Outlook
Chapter 6 : Terahertz Quantum Cascade Lasers
Roberto Paiella
1. Introduction
2. Fundamentals of Intersubband Transitions
3. Active Material Design
4. Optical Waveguides and Cavities
5. State-of-the-Art Performance and Limitations
6. Novel Materials Systems
6.1 III-Nitride Quantum Wells
6.2 SiGe Quantum Wells
7. Conclusion
Chapter 7: Advanced Devices Using Two-Dimensional Layer Technology
Berardi Sensale-Rodriguez
7.1. Graphene-based THz Devices
7.1.1. THz Properties of graphene
7.1.2. How to simulate and model graphene?
7.1.3. Terahertz device applications of graphene
Modulators
- Broadband structures
- Electromagnetic-cavity integrated structures
- Graphene/metal -hybrid metamaterials
- Graphene/dielectric -hybrid metamaterials
- Active filters
- Phase modulation in graphene-based metamaterials
7.2. TMD based THz Devices
7.3. Applications
Chapter 8: THz Plasma Field Effect Transistor Detectors
Naznin Akter, Nezih Pala, Wojcieech Knap, Michael Shur
Introduction
Field effect transistors (fets) and thz plasma oscillations
2.1. Dispersion of plasma waves in fets
2.2. THz detection by an fet
Resonant detection
Broadband detection
THz detectors based on silicon fets
Terahertz detection by graphene plasmonic fets
Terahertz detection in black-phosphorus nano-transistors
Diamond plasmonic thz detectors
Conclusion
[Was Chapter 13] Chapter 9: Signal Generation by Diode Multiplication
Alain Maestrini and Jose Siles
1 Introduction 3
2 Bridging the microwave to photonics gap with terahertz frequency multipliers 3
3 A practical approach to the design of frequency multipliers 5
3.1 Frequency multiplier versus comb generator 5
3.2 Frequency multiplier ideal matching network and ideal device performance 6
3.3 Symmetry at device level versus symmetry at circuit level 7
3.4 Classic balanced frequency doublers 8
3.4.1 General circuit description 8
3.4.2 Necessary condition to balance the circuit 9
3.5 Balanced frequency triplers with an anti-parallel pair of diodes 11
3.6 Multi-anode frequency triplers in a virtual loop configuration 12
3.6.1 General circuit description 12
3.6.2 Necessary condition to balance the circuit 14
3.7 Multiplier design optimization 15
3.7.1 General design methodology 16
3.7.2 Non-linear modeling of the Schottky diode barrier 22
3.7.3 3D modeling of the extrinsic structure of the diodes 23
3.7.4 Modeling and optimization of the diode cell 24
3.7.5 Input and output matching circuits. 26
4 Technology of THz diode frequency multipliers 26
4.1 From Whisker-contacted diodes to Planar Discrete Diodes 26
4.2 Semi-monolithic frequency multipliers at THz frequencies 27
4.3 THz local oscillators for the Heterodyne Instrument of Herschel Space Observatory 29
4.4 First 2.7THz multiplier chain with more than 10µW of power at room temperature 32
4.5 High power 1.6THz frequency multiplied source for future 4.75THz local oscillator 34
5 Power-combining at sub-millimeter wavelength 36
5.1 In-phase power combining 36
5.1.1 First in-phase power-combined submillimeter-wave frequency multiplier 37
5.1.2 In-phase power combining at 900GHz 38
5.1.3 In-phase power-combined balanced doublers 40
5.2 In-channel power combining 41
5.3 Advanced on-chip power combining 42
5.3.1 High power 490-560GHz frequency tripler 43
5.3.2 Dual-Output 550 GHz Frequency Tripler 43
5.3.3 High-power quad channel 165-195GHz frequency doubler 44
6 Conclusions and perspectives 46
7 References 46
8 Problems 52
[WasChapter 9] Chapter 10: GaN Multipliers
Chong Jin and Dimitris Pavlidis
1 Introduction
1.1 Frequency Multipliers
1.2 Properties of Nitride Materials
1.3 Motivation and Challenges
2 Theoretical Considerations of GaN Schottky Diode Design
2.1 Analysis by Analytical Equations
2.1.1 Nonlinearity and Harmonic Generation
2.1.2 Nonlinearity of Ideal Schottky Diode
2.1.3 Series Resistance
2.2 Analysis by numeric simulation
2.2.1 Introduction of Semiconductor Device Numerical Simulation
2.2.2 Parameters for GaN Based Device Simulation
2.2.3 Simulation Results
Device Structure
Breakdown voltage
I-V characteristics
Series resistance
C-V characteristics
Time Domain Transient Analysis
2.3 Conclusions on Theoretical Considerations of GaN Schottky Diode Design
3 Fabrication Process of GaN Schottky Diodes
3.1 Fabrication Process
3.2 Etching
3.3 Metallization
3.3.1 Ohmic Contacts on GaN
3.3.2 Schottky Contacts on GaN
Analysis of Schottky contact characteristics
Oxygen plasma before Schottky metallization
3.4 Bridge Interconnects
Dielectric Bridge
Optical Air-bridge
E-Beam Air-bridge
3.5 Conclusion on Fabrication Process of GaN Schottky Diodes
Small-signal High Frequency Characterization of GaN Schottky
4 Diodes
4.1 Current-Voltage Characteristics
4.2 Small-signal Characterization and Equivalent Circuit Modeling
Step 1. Parasitic elements
Step 2. Junction Capacitance
Step 3. Optimization
Summary
4.3 Results
4.4 Conclusion
5 Large-Signal On-wafer Characterization
5.1 Characterization Approach
5.2 Large signal measurements of GaN Schottky diodes
5.2.1 LSNA with 50 Omega load
Time domain waveforms
Power handling characteristics
5.3 LSNA with harmonic loadpull
5.4 Conclusion
6 GaN Diode Implementation for Signal generation
6.1 Large-signal modeling of GaN Schottky diodes
6.2 Frequency Doubler
7 Multiplier Considerations for Optimum Performance
Exercises
[Was Chapter 10] Chapter 11: THz Resonant Tunneling Devices
Masahiro Asada and Safumi Suzuki
10.1 Introduction
10.2 Basic structure and operation of RTD
10.2.1 Basic operation of RTD
10.2.2 Principle of oscillation
10.2.3 Effect of electron delay time
10.3 Structure and oscillation characteristics of fabricated RTD oscillators
10.3.1 Actual structure of RTD oscillators
10.3.2 High-frequency oscillation
10.3.3 High-output power oscillation
10.4 Control of oscillation spectrum and frequency
10.4.1 Oscillation spectrum and phase-locked loop
10.4.2 Frequency-tunable oscillators
10.5 Targeted applications
10.5.1 High-speed wireless communications
10.5.2 Spectroscopy
10.5.3 Other applications and expected future development
[Was Chapter 11] Chapter 12: Wireless communications in the THz range
G. Ducournau, T. Nagatsuma
11.1 Evolution of telecoms towards THz
11.1.1 Brief historic
11.1.2 Data rate evolution
11.1.3 THz waves: propagation, advantages and disadvantages
11.1.4 Frequency bands
11.1.5 Potential scenarios
11.1.6 Comparison between FSO and THz
11.2 THz technologies: transmitters, receivers and basic architecture
11.2.1 THz sources
11.2.2 THz receivers
11.2.3 Basic architecture of the transmission system
11.3 Devices/function examples for T-ray coms
11.3.1 Photomixing techniques for THz coms
11.3.2 THz modulated signals enabled by photomixing
11.3.3 Other techniques for the generation of modulated THz signals
11.3.4 Integration, interconnections and antennas
11.3.4.1 Integration
11.3.4.2 Antennas
11.4 THz links
11.4.1 Modulations and key Indicators of a THz Communication Link
11.4.2 State of the art of THz links
11.4.2.1 First systems
11.4.2.2 Photonics-based demos
11.4.2.3 Electronic-based demos
11.4.2.4 Beyond 100 GHz high power amplification
11.4.2.5 Table of reported systems
11.5 Towards normalisation of 100G links in the THz range
11.6 Conclusion Error! Bookmark not defined.
11. 7 Acronyms
11.8 References
11.9 Exercice : link budget of a THz link
[Was Chapter 12] Chapter 13: THz Applications: Devices to Space System
Imran Mehdi
12.1 INTRODUCTION
12.1.1 Why is THz technology important for space science?
12.1.2 Fundamentals of THz Spectroscopy
12.1.3 THz Technology for Space Exploration
12.2 THz HETERODYNE RECEIVERS
12.2.1 Local Oscillators
12.2.1.1 Frequency Multiplied Chains
12.2.2 Mixers
12.2.2.1 Room Temperature Schottky Diode Mixers
12.2.2.2 SIS Mixer Technology
12.2.2.3 Hot Electron Bolometric (HEB) Mixers
12.2.2.4 State-of-the-Art Receiver Sensitivities
12.3 THZ SPACE APPLICATIONS
12.3.1 Planetary Science: The Case for Miniaturization
12.3.2 Astrophysics: The Case for THz Array Receivers
12.3.3 Earth Science: The Case for Active THz Systems
12.4 SUMMARY AND FUTURE TRENDS
12.5 REFERENCES AND CITATIONS
12.6 PROBLEMS
Index
Acknowledgements [still to follow]
Chapter 1: Introduction to THz Technologies
Dimitris Pavlidis
Chapter 2: THz Antennas
Maria Alonso-delPino and Nuria Llombart Juan
Introduction
Elliptical Lens Antennas
2.1 Elliptical Lens Synthesis
2.2 Radiation of Elliptical Lenses
2.2.1 Transmission function T (Q)
2.2.2 Spreading Factor S(Q)
2.2.3 Equivalent Current Distribution and Far-Field Calculation
2.2.4 Lens Reflection Efficiency
3. Extended Semi-Hemispherical lens antennas
3. 1 Radiation of extended semi-hemispherical lenses
4. Shallow Lenses excited by leaky wave /Fabry-Perot feeds
4.1.Analysis of the leaky-wave propagation constant
4.2 Primary fields radiated by a leaky-wave antenna feed on an infinite medium
4.3 Shallow-Lens geometry optimization
5. Fly-eye Antenna Array
5.1 Silicon DRIE micromachining process at submillimeter-wave frequencies
5.1.1 Fabrication of silicon lenses using DRIE
5.1.2 Surface Accuracy
5.2 Examples of fabricated antennas
Chapter 3: Photoconductive THz Sources Driven at 1550 nm
E.R. Brown, G. Carpintero del Barrio, A. Rivera, D. Segovia-Vargas, B. Globisch, and A. Steiger
I. Introduction
Overview of THz Photoconductive Sources
Lasers and Fiber Optics
II. 1550-nm THz photoconductive sources
II.A. Epitaxial Materials
Bandgap Engineering
Low Temperature Growth
II.B. Device Types and Modes of Operation
II.C. Analysis of THz photoconductive sources
II.C.1. PC-Switch Analysis
II.C.2. Photomixer Analysis
II.C.2.a. p-i-n photodiode
II.C.2.b. MSM bulk photoconductor
II.D. Practical Issues
Contact Effects
Thermal Effects
Circuit Limitations
III. THz Metrology
Power Measurements
A Traceable Power Sensor
Exemplary THz Power Measurement Exercise
Other Sources of Error
Frequency Metrology
IV. THz Antenna Coupling
Fundamental Principles
Planar antennas on dielectric substrates
Input Impedance
DeltaEIRP (increase in the EIRP of the transmitting antenna)
G/T or Aeff/T
Estimation of Power Coupling Factor
Exemplary THz Planar Antennas
Resonant antennas
Quick survey of self-complementary antennas
V. State-of-the-Art in 1550-nm Photoconductive Sources Error! Bookmark not defined.
1550-nm MSM Photoconductive Switches
Material and Device Design
THz Performance
1550-nm Photodiode CW (photomixer) Sources
Material and Device Design
THz Performance
VI. Alternative 1550-nm THz Photoconductive Sources Error! Bookmark not defined.
Fe-Doped InGaAs
ErAs Nanoparticles in GaAs: Extrinsic Photoconductivity
VII. System Applications Error! Bookmark not defined.
Comparison between pulsed and cw THz systems
Device aspects
Systems aspects
Wireless Communications
THz Spectroscopy
Time vs Frequency Domain Systems
Analysis of Frequency Domain Systems: Amplitude and Phase Modulation
Exercises
Chapter 4 : THz Photomixers
E. Peytavit, G. Ducournau, J-F. Lampin
1. Introduction
2. Elliptical Lens Antennas
2.1 Elliptical Lens Synthesis
2.2 Radiation of Elliptical Lenses
2.2.1 Transmission function TQ
2.2.2 Spreading Factor SQ
2.2.3 Equivalent Current Distribution and Far-Field Calculation
2.2.4 Lens Reflection Efficiency
3. Extended Semi-Hemispherical lens antennas
3. 1 Radiation of extended semi-hemispherical lenses
4. Shallow Lenses excited by leaky wave /Fabry-Perot feeds
4.1.Analysis of the leaky-wave propagation constant
4.2 Primary fields radiated by a leaky-wave antenna feed on an infinite medium
4.3 Shallow-Lens geometry optimization
5. Fly-eye Antenna Array
5.1 Silicon DRIE micromachining process at submillimeter-wave frequencies
5.1.1 Fabrication of silicon lenses using DRIE
5.1.2 Surface Accuracy
5.2 Examples of fabricated antennas
Chapter 5: Plasmonics-enhanced Photoconductive Terahertz Devices
Ping Keng Lu and Mona Jarrahi
Introduction
Photoconductive Antennas
Photoconductors for THz operation
Photoconductive THz emitters
Pulsed THz emitters
Continuous-wave THz emitters
Photoconductive THz Detectors
Common photoconductors and antennas for photoconductive THz devices
Plasmonics-enhanced photoconductive antennas
Fundamentals of plasmonics
Plasmonics for enhancing performance of photoconductive THz devices
Principles of plasmonic enhancement
Design considerations for plasmonic nanostructures
State-of-the-art plasmonics-enhanced photoconductive THz devices
Photoconductive THz devices with plasmonic contact electrodes
Large area plasmonic photoconductive nanoantenna arrays
Plasmonic photoconductive THz devices with optical nanocavities
Conclusion and Outlook
Chapter 6 : Terahertz Quantum Cascade Lasers
Roberto Paiella
1. Introduction
2. Fundamentals of Intersubband Transitions
3. Active Material Design
4. Optical Waveguides and Cavities
5. State-of-the-Art Performance and Limitations
6. Novel Materials Systems
6.1 III-Nitride Quantum Wells
6.2 SiGe Quantum Wells
7. Conclusion
Chapter 7: Advanced Devices Using Two-Dimensional Layer Technology
Berardi Sensale-Rodriguez
7.1. Graphene-based THz Devices
7.1.1. THz Properties of graphene
7.1.2. How to simulate and model graphene?
7.1.3. Terahertz device applications of graphene
Modulators
- Broadband structures
- Electromagnetic-cavity integrated structures
- Graphene/metal -hybrid metamaterials
- Graphene/dielectric -hybrid metamaterials
- Active filters
- Phase modulation in graphene-based metamaterials
7.2. TMD based THz Devices
7.3. Applications
Chapter 8: THz Plasma Field Effect Transistor Detectors
Naznin Akter, Nezih Pala, Wojcieech Knap, Michael Shur
Introduction
Field effect transistors (fets) and thz plasma oscillations
2.1. Dispersion of plasma waves in fets
2.2. THz detection by an fet
Resonant detection
Broadband detection
THz detectors based on silicon fets
Terahertz detection by graphene plasmonic fets
Terahertz detection in black-phosphorus nano-transistors
Diamond plasmonic thz detectors
Conclusion
[Was Chapter 13] Chapter 9: Signal Generation by Diode Multiplication
Alain Maestrini and Jose Siles
1 Introduction 3
2 Bridging the microwave to photonics gap with terahertz frequency multipliers 3
3 A practical approach to the design of frequency multipliers 5
3.1 Frequency multiplier versus comb generator 5
3.2 Frequency multiplier ideal matching network and ideal device performance 6
3.3 Symmetry at device level versus symmetry at circuit level 7
3.4 Classic balanced frequency doublers 8
3.4.1 General circuit description 8
3.4.2 Necessary condition to balance the circuit 9
3.5 Balanced frequency triplers with an anti-parallel pair of diodes 11
3.6 Multi-anode frequency triplers in a virtual loop configuration 12
3.6.1 General circuit description 12
3.6.2 Necessary condition to balance the circuit 14
3.7 Multiplier design optimization 15
3.7.1 General design methodology 16
3.7.2 Non-linear modeling of the Schottky diode barrier 22
3.7.3 3D modeling of the extrinsic structure of the diodes 23
3.7.4 Modeling and optimization of the diode cell 24
3.7.5 Input and output matching circuits. 26
4 Technology of THz diode frequency multipliers 26
4.1 From Whisker-contacted diodes to Planar Discrete Diodes 26
4.2 Semi-monolithic frequency multipliers at THz frequencies 27
4.3 THz local oscillators for the Heterodyne Instrument of Herschel Space Observatory 29
4.4 First 2.7THz multiplier chain with more than 10µW of power at room temperature 32
4.5 High power 1.6THz frequency multiplied source for future 4.75THz local oscillator 34
5 Power-combining at sub-millimeter wavelength 36
5.1 In-phase power combining 36
5.1.1 First in-phase power-combined submillimeter-wave frequency multiplier 37
5.1.2 In-phase power combining at 900GHz 38
5.1.3 In-phase power-combined balanced doublers 40
5.2 In-channel power combining 41
5.3 Advanced on-chip power combining 42
5.3.1 High power 490-560GHz frequency tripler 43
5.3.2 Dual-Output 550 GHz Frequency Tripler 43
5.3.3 High-power quad channel 165-195GHz frequency doubler 44
6 Conclusions and perspectives 46
7 References 46
8 Problems 52
[WasChapter 9] Chapter 10: GaN Multipliers
Chong Jin and Dimitris Pavlidis
1 Introduction
1.1 Frequency Multipliers
1.2 Properties of Nitride Materials
1.3 Motivation and Challenges
2 Theoretical Considerations of GaN Schottky Diode Design
2.1 Analysis by Analytical Equations
2.1.1 Nonlinearity and Harmonic Generation
2.1.2 Nonlinearity of Ideal Schottky Diode
2.1.3 Series Resistance
2.2 Analysis by numeric simulation
2.2.1 Introduction of Semiconductor Device Numerical Simulation
2.2.2 Parameters for GaN Based Device Simulation
2.2.3 Simulation Results
Device Structure
Breakdown voltage
I-V characteristics
Series resistance
C-V characteristics
Time Domain Transient Analysis
2.3 Conclusions on Theoretical Considerations of GaN Schottky Diode Design
3 Fabrication Process of GaN Schottky Diodes
3.1 Fabrication Process
3.2 Etching
3.3 Metallization
3.3.1 Ohmic Contacts on GaN
3.3.2 Schottky Contacts on GaN
Analysis of Schottky contact characteristics
Oxygen plasma before Schottky metallization
3.4 Bridge Interconnects
Dielectric Bridge
Optical Air-bridge
E-Beam Air-bridge
3.5 Conclusion on Fabrication Process of GaN Schottky Diodes
Small-signal High Frequency Characterization of GaN Schottky
4 Diodes
4.1 Current-Voltage Characteristics
4.2 Small-signal Characterization and Equivalent Circuit Modeling
Step 1. Parasitic elements
Step 2. Junction Capacitance
Step 3. Optimization
Summary
4.3 Results
4.4 Conclusion
5 Large-Signal On-wafer Characterization
5.1 Characterization Approach
5.2 Large signal measurements of GaN Schottky diodes
5.2.1 LSNA with 50 Omega load
Time domain waveforms
Power handling characteristics
5.3 LSNA with harmonic loadpull
5.4 Conclusion
6 GaN Diode Implementation for Signal generation
6.1 Large-signal modeling of GaN Schottky diodes
6.2 Frequency Doubler
7 Multiplier Considerations for Optimum Performance
Exercises
[Was Chapter 10] Chapter 11: THz Resonant Tunneling Devices
Masahiro Asada and Safumi Suzuki
10.1 Introduction
10.2 Basic structure and operation of RTD
10.2.1 Basic operation of RTD
10.2.2 Principle of oscillation
10.2.3 Effect of electron delay time
10.3 Structure and oscillation characteristics of fabricated RTD oscillators
10.3.1 Actual structure of RTD oscillators
10.3.2 High-frequency oscillation
10.3.3 High-output power oscillation
10.4 Control of oscillation spectrum and frequency
10.4.1 Oscillation spectrum and phase-locked loop
10.4.2 Frequency-tunable oscillators
10.5 Targeted applications
10.5.1 High-speed wireless communications
10.5.2 Spectroscopy
10.5.3 Other applications and expected future development
[Was Chapter 11] Chapter 12: Wireless communications in the THz range
G. Ducournau, T. Nagatsuma
11.1 Evolution of telecoms towards THz
11.1.1 Brief historic
11.1.2 Data rate evolution
11.1.3 THz waves: propagation, advantages and disadvantages
11.1.4 Frequency bands
11.1.5 Potential scenarios
11.1.6 Comparison between FSO and THz
11.2 THz technologies: transmitters, receivers and basic architecture
11.2.1 THz sources
11.2.2 THz receivers
11.2.3 Basic architecture of the transmission system
11.3 Devices/function examples for T-ray coms
11.3.1 Photomixing techniques for THz coms
11.3.2 THz modulated signals enabled by photomixing
11.3.3 Other techniques for the generation of modulated THz signals
11.3.4 Integration, interconnections and antennas
11.3.4.1 Integration
11.3.4.2 Antennas
11.4 THz links
11.4.1 Modulations and key Indicators of a THz Communication Link
11.4.2 State of the art of THz links
11.4.2.1 First systems
11.4.2.2 Photonics-based demos
11.4.2.3 Electronic-based demos
11.4.2.4 Beyond 100 GHz high power amplification
11.4.2.5 Table of reported systems
11.5 Towards normalisation of 100G links in the THz range
11.6 Conclusion Error! Bookmark not defined.
11. 7 Acronyms
11.8 References
11.9 Exercice : link budget of a THz link
[Was Chapter 12] Chapter 13: THz Applications: Devices to Space System
Imran Mehdi
12.1 INTRODUCTION
12.1.1 Why is THz technology important for space science?
12.1.2 Fundamentals of THz Spectroscopy
12.1.3 THz Technology for Space Exploration
12.2 THz HETERODYNE RECEIVERS
12.2.1 Local Oscillators
12.2.1.1 Frequency Multiplied Chains
12.2.2 Mixers
12.2.2.1 Room Temperature Schottky Diode Mixers
12.2.2.2 SIS Mixer Technology
12.2.2.3 Hot Electron Bolometric (HEB) Mixers
12.2.2.4 State-of-the-Art Receiver Sensitivities
12.3 THZ SPACE APPLICATIONS
12.3.1 Planetary Science: The Case for Miniaturization
12.3.2 Astrophysics: The Case for THz Array Receivers
12.3.3 Earth Science: The Case for Active THz Systems
12.4 SUMMARY AND FUTURE TRENDS
12.5 REFERENCES AND CITATIONS
12.6 PROBLEMS
Index
Dimitris Pavlidis is a Research Professor at Florida International University. He has been Professor of Electrical Engineering and Computer Science at the University of Michigan (UofM) from 1986 to 2004 and a Founding Member of UofM?s first of its kind NASA THz Center in 1988. He served as Program Director in Electronics, Photonics and Magnetic Devices (EPMD) at the National Science Foundation. He received the decoration of "Palmes Academiques" in the order of Chevalier by the French Ministry of Education and Distinguished Educator Award of the IEEE/MTT-S and is an IEEE Life Fellow.
