|  | Levinshtein, Michael E. / Rumyantsev, Sergey L. / Shur, Michael S. (eds.)
Properties of Advanced Semiconductor Materials
GaN, AIN, InN, BN, SiC, SiGe
 1. Edition January 2001
119.- Euro
2001. 216 Pages, Hardcover
ISBN 978-0-471-35827-5 - John Wiley & Sons
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| Short description
Several advanced semiconductor materials are now in the forefront of semiconductor research. These materials include different polytypes of SiC, SiGe alloys, and nitrides, such as GaN, InN, AIN, and BN. Each of these materials has many applications in the power industry, microwave industry, consumer products, medicine, and defense.
From the contents
Contributors.
Preface.
Gallium Nitride (GaN) (V. Bougrov, et al.).
Aluminum Nitride (AIN) (Y. Goldberg).
Indium Nitride (InN) (A. Zubrilov).
Boron Nitride (BN) (S. Rumyantsev, et al.).
Silicon Carbide (SiC) (Y. Goldberg, et al.).
Silicon-Germanium (Si_1-xGe_x) (F. Schäffler).
Appendix 1: Basic Physical Constants.
Appendix 2: Periodic Table of the Elements.
Appendix 3: Rectangular Coordinates for Hexagonal Crystal.
Appendix 4: The First Brillouin Zone for Wurtzite Crystal.
Appendix 5: Zinc Blende Structure.
Appendix 6: The First Brillouin Zone for Zinc Blende Crystal.
Additional References.
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