1. Edition - January 2007
195.- Euro
2007. XXII, 497 Pages, Hardcover
220 Fig., 53 Tab. 
- Monograph -
ISBN-10: 3-527-40667-0
ISBN-13: 978-3-527-40667-8 - Wiley-VCH, Berlin






Sample Chapter



Short description
The book describes physical principles, mathematical models, and practical simulation results for GaN-based semiconductor devices, such as light-emitting diodes, laser diodes, photodetectors, and transistors.

From the contents
Part 1: MATERIALS
1. Introduction
2. Electron Bandstructure Parameters
3. Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
4. Transport Parameters for Electrons and Holes
5. Optical Constants of Bulk Nitrides
6. Intersubband Absorption in AlGaN/GaN Quantum Wells
7. Interband Transitions in InGaN Quantum Wells
8. Electronic and Optical Properties of GaN-based Quantum Wells with (10-10) Crystal Orientation
9. Carrier Scattering in Quantum-Dot Systems

Part 2: DEVICES
10. AlGaN/GaN High Electron Mobility Transistors
11. Intersubband Optical Switches for Optical Communications
12. Intersubband Electroabsorption Modulator
13. Ultraviolet Light-Emitting Diodes
14. Visible Light-Emitting Diodes
15. Simulation of LEDs with Phosphorescent Media for the Generation of White Light
16. Fundamental Characteristics of Edge-Emitting Lasers
17. Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers
18. Optical Properties of Edge-Emitting Lasers: Measurement and Simulation
19. Electronic Properties of InGaN/GaN Vertical-Cavity Lasers
20. Optical Design of Vertical-Cavity Lasers
21. GaN Nanowire Lasers