1. Auflage - Oktober 2008
299,- Euro
2008. LV, 847 Seiten, Hardcover
427 Abb. (51 Farbabb.), 29 Tab. 
- Handbuch/Nachschlagewerk -
ISBN-10: 3-527-40839-8
ISBN-13: 978-3-527-40839-9 - Wiley-VCH, Berlin

Preis inkl. Mehrwertsteuer zzgl. Versandkosten.





Inhalt

Probekapitel

Index



Kurzbeschreibung
Dieser dritte Band des herausragenden Handbuches zu sämtlichen Eigenschaften von Nitrid-Halbleitern widmet sich schwerpunktmäßig den Anwendungsfeldern LED (Leuchtdioden), Laser, FET (Feldeffekttransistoren), HBT (Heterojunction Bipolar Transistors) und Detektoren.

Aus dem Inhalt
Preface

1 Light-Emitting Diodes and Lighting
Introduction
1.1 Current-Conduction Mechanism in LED-Like Structures
1.2 Optical Output Power
1.3 Losses and Efficiency
1.4 Current Crowding
1.5 Packaging
1.6 Perception of Visible Light and Color
1.7 Visible-Light Terminology
1.8 Inroads by LEDs
1.9 Nitride LED Performance
1.10 On the Nature of Light Emission in Nitride-Based LEDs
1.11 LED Degradation
1.12 LED Efficiency
1.13 Monochrome Applications of LEDs
1.14 Luminescence Conversion and White-Light Generation with Nitride LEDs
1.15 Approaches to White-Light Generation
1.16 Toward the White-Light Applications
1.17 Organic/Polymeric LEDs (OLED, PLED)

2 Semiconductor Lasers
Introduction
2.1 A Primer to the Principles of Lasers
2.2 Waveguiding
2.3 Loss, Threshold, and Cavity Modes
2.4 Optical Gain
2.5 Coulombic Effects
2.6 Numerical Gain Calculations for GaN
2.7 Threshold Current
2.8 Analysis of Injection Lasers with Simplifying Assumptions
2.9 Recombination Lifetime
2.10 Quantum Efficiency
2.11 GaN-Based LD Design and Performance
2.12 Gain Spectra of InGaN Injection Lasers
2.13 Near-UV Lasers
2.14 Reflector Stacks and Vertical Cavity Surface-Emitting Lasers (VCSELs)
2.15 Polariton Lasers
2.16 GaInNAs Quaternary Infrared Lasers
2.17 Laser Degradation
2.18 Applications of GaN-Based Lasers to DVDs
2.19 A Succinct Review of the Laser Evolution in Nitrides

3 Field Effect Transistors and Heterojunction Bipolar Transistors
Introduction
3.1 Heterojunction Field Effect Transistors
3.2 The s-Parameters and Gain
3.3 Equivalent Circuit Models, Deembedding, and Cutoff Frequency
3.4 HFET Amplifier Classification and Efficiency
3.5 AlGaN/GaN HFETs
3.6 Electronic Noise
3.7 Dielectrics for Passivation Purposes or Gate Leakage Reduction
3.8 Heat Dissipation and Junction Temperature
3.9 Hot Phonon Effects
3.10 InGaN Channel and/or InAlN Barrier HFETs
3.11 FET Degradation
3.12 Heterojunction Bipolar Transistors
3.13 Concluding Comments
3.14 Appendix: Sheet Charge Calculation in AlGaN/GaN Structures with AlN Interface Layer (AlGaN/AlN/GaN)

4 Ultraviolet Detectors
Introduction
4.1 Principles of Photodetectors
4.2 Particulars of Deep UV Radiation and Detection
4.3 Si and SiC-Based UV Photodetectors
4.4 Nitride-Based Detectors
4.5 UV Imagers
4.6 Concluding Comments