|  | Levinshtein, Michael E. / Rumyantsev, Sergey L. / Shur, Michael S. (Hrsg.)
Properties of Advanced Semiconductor Materials
GaN, AIN, InN, BN, SiC, SiGe
 1. Auflage Januar 2001
119,- Euro
2001. 216 Seiten, Hardcover
ISBN 978-0-471-35827-5 - John Wiley & Sons
Preis inkl. Mehrwertsteuer zzgl. Versandkosten.
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| Kurzbeschreibung
Several advanced semiconductor materials are now in the forefront of semiconductor research. These materials include different polytypes of SiC, SiGe alloys, and nitrides, such as GaN, InN, AIN, and BN. Each of these materials has many applications in the power industry, microwave industry, consumer products, medicine, and defense.
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Contributors.
Preface.
Gallium Nitride (GaN) (V. Bougrov, et al.).
Aluminum Nitride (AIN) (Y. Goldberg).
Indium Nitride (InN) (A. Zubrilov).
Boron Nitride (BN) (S. Rumyantsev, et al.).
Silicon Carbide (SiC) (Y. Goldberg, et al.).
Silicon-Germanium (Si_1-xGe_x) (F. Schäffler).
Appendix 1: Basic Physical Constants.
Appendix 2: Periodic Table of the Elements.
Appendix 3: Rectangular Coordinates for Hexagonal Crystal.
Appendix 4: The First Brillouin Zone for Wurtzite Crystal.
Appendix 5: Zinc Blende Structure.
Appendix 6: The First Brillouin Zone for Zinc Blende Crystal.
Additional References.
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