Fundamentals of Semiconductor Fabrication

May, Gary S. / Sze, Simon M.

1. Auflage August 2007
320 Seiten, Softcover
Wiley & Sons Ltd

ISBN: 978-0-471-23279-7

John Wiley & Sons

Kurzbeschreibung

From crystal growth to integrated devices and circuits, this new book offers a basic, up-to-date introduction to semiconductor fabrication technology, including both the theoretical and practical aspects of all major steps in the fabrication sequence.

Fundamentals of Semiconductor Fabrication provides an introduction to semiconductor fabrication technology, from crystal growth to integrated devices and circuits. It includes theoretical and practical aspects of all major fabrication steps, making it a useful reference tool when students enter the semiconductor industry. Each chapter begins with an introduction and a list of learning goals, and each chapter ends with a summary of important concepts and suggested homework problems.

* Introduction
* Crystal Growth
* Silicon Oxidation
* Photolithography
* Etching
* Diffusion
* Ion Implantation
* Film Deposition
* Process Integration
* IC Manufacturing
* Future Trends and Challenges

Appendix A: List of Symbols
Appendix B: International System of Units
Appendix C: Unit Prefixes
Appendix D: Greek Alphabet
Appendix E: Physical Constants
Appendix F: Properties of Si and GaAs at 300K
Appendix G: Properties of the Error Function
Appendix H: Basic Kinetic Theory of Gas
Appendix I: SUPREM Commands
Appendix J: Percentage Points of the t Distribution
Appendix K: Percentage Points of the F Distribution

Gary S. May, Ph.D. is Executive Assistant to the President and Motorola Foundation Professor of Microelectronics in the School of Electrical and Computer Engineering at the Georgia Institute of Technology. Dr. May was a national Science Foundation national Young Investigator, Georgia Tech's Outstanding Young Alumnus, received Georgia Tech's Outstanding Service Award, and was named a Giant of Science by the Quality Education for Minorities network in 2001. He was a member of the NSF Engineering Advisory Committee, served on and chaired the NSF Committee for Equal Opportunity in Science and Engineering, and was Editor-in-Chief for IEEE Transactions of Semiconductor Manufacturing from 1997 to 2001. Dr. May currently serves as chair of the National Advisory Board for the National Society of Black Engineers.

Simon M. Sze, Ph.D. is UMC Chair Professor of National Chiao Tung University, and President of the National Nano Device Laboratories. He has received the IEEE Ebers Award, the Sun Yet-sen Award, the National Science and Technology Award, and the National Chair Professor Award. He is a Life Fellow of IEEE, a member of the Academia Sinica, the Chinese Academy of Engineering, and the US National Academy of Engineering. He has authored or coauthored over 150 technical papers, and has written, edited, and contributed to 24 books. His book Physics of Semiconductor Devices (Wiley 1969, 2nd Ed, 1981) is the most cited work in contemporary engineering and applied science publications (over 12,000 citations from ISI Press).

G. S. May, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia; S. M. Sze, National Chiao Tung Univ., National Nano Device Laboratories, Hsinchu, Taiwan