MOSFET Models for SPICE Simulation
Including BSIM3v3 and BSIM4
Wiley - IEEE (Series Nr. 1)
1. Edition January 2001
600 Pages, Hardcover
Wiley & Sons Ltd
Short Description
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. BSIM3 is a physics-based MOSFET SPICE model for circuit simulation and CMOS technology development. The model was developed by the BSIM Research Group at the University of California at Berkeley. In the next few years many semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3.This book describes the reasons why BSIM3 is the model adopted by most companies, the details of the model, as well as some areas in need of improvement. Of the five chapters in the book one is devoted to a discussion of BSIM4, the widely discussed next generation model of BSIM3. Because MOSFETs are the device that comprises roughly 90% of the semiconductor market, there is a large audience for this book among professional engineers, researchers and students.
An expert guide to understanding and making optimum use of BSIM
Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4.
Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He:
* Summarizes key BSIM3 components
* Represents the BSIM3 model with equivalent circuits for various operating conditions
* Provides a comprehensive glossary of modeling terminology
* Lists alphabetically BSIM3 parameters along with their meanings and relevant equations
* Explores BSIM3's flaws and provides improvement suggestions
* Describes all of BSIM4's improvements and new features
* Provides useful SPICE files, which are available online at the Wiley ftp site
Modeling Jargons.
Basic Facts About BSIM3.
BSIM3 Parameters.
Improvable Areas of BSIM3.
Improvements in BSIM4.
Appendix A: BSIM3 Equations.
Appendix B: Capacitances and Charges for All Bias Conditions.
Appendix C: Non-Quasi-Static y-Parameters.
Appendix D: Fringing Capacitance.
Appendix E: BSIM3 Non-Quasi-Static Modeling.
Appendix F: Noise Figure.
Appendix G: BSIM4 Equations.
Index.
