Device Electronics for Integrated Circuits
3. Edition January 2003
560 Pages, Hardcover
Wiley & Sons Ltd
Short Description
This book provides all the required information for a course in modern device electronics taken by undergraduate electrical engineers. Offers coverage of silicon technology, several topics in basic semiconductor physics, and Hall-effect sensors. The chapters on MOSFET focus on mobility variations and threshold-voltage dependence. Additional topics include VLSI devices, short channel effects, and computer modeling.
Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Silicon Technology.
Metal-Semiconductor Contacts.
pn Junctions.
Currents in pn Junctions.
Bipolar Transistors I: Basic Properties.
Bipolar Transistors II: Limitations and Models.
Properties of the Metal-Oxide-Silicon System.
Mos Field-Effect Transistors I: Physical Effects and Models.
Mos Field-Effect Transistors II: High-Field Effects.
Answers to Selected Problems.
Selected List of Symbols.
Index.
