Nitride Semiconductor Technology
Power Electronics and Optoelectronic Devices
1. Edition September 2020
XVI, 446 Pages, Hardcover
293 Pictures (268 Colored Figures)
16 tables
Monograph
Short Description
The book "Nitride Semiconductor Technology" covers nitride semiconductor technology from materials to devices and provides the basis for further research and development.
Further versions
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices.
In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
GaN-Based Materials: Substrates, Growth Methods and Quantum Well Properties
State of the Art of GaN-Based HEMTs for Mm-Wave Applications
Technologies for Normally-Off GaN HEMTs
Status and Perspectives of Vertical GaN Power Devices
Gallium Nitride Light Emitting Diodes
Nitride-Based Laser Diodes
Blue and Green Vertical-Cavity Surface-Emitting Lasers
Reliability Issues in GaN HEMTs and LEDs
Integration of GaN with 2D Materials for Novel High Frequency Devices
Michal Leszczynski is a Professor of Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress), Warsaw, Poland. He received his PhD (1990) and Habilitation (1996) in Physics from Institute of Physics - Polish Academy of Science, Warsaw. He then did postdoctoral research at Institute of Theoretical Physics, Trieste, Italy and at Institute of Advanced Materials, Brindisi, Italy. He has served as Visiting Professor at Center of Atomic Energy, Grenoble, France and as Advisor at Philips Analytical, Netherlands. Prof. Leszczynski is a co-founder and now vice-president (R&D) of TopGaN Lasers, a spinoff of Unipress. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction. He has authored more than 350 research articles.
