Non-Volatile Memory and Selector Devices
Technology and Applications
1. Edition July 2026
736 Pages, Hardcover
300 Pictures (100 Colored Figures)
Handbook/Reference Book
ISBN:
978-3-527-35399-6
Wiley-VCH, Weinheim
PART I: INTRODUCTION TO NON-VOLATILE MEMORY
Introduction
3-D NAND Flash memories: technological evolution and prospective applications
NAND Flash Revolution: Conquering Reliability and Variability in the 2D to 3D Transition
Two-Dimensional Materials for Future Transistors
PART II: NON-VOLATILE MEMORY BASED ON VARIOUS MECHANISMS
Phase-Change Memory
Magnetic Random Access Memory: Past, Present and Future
Ferroelectric Fundamentals Unraveling the Science of HfO2 for Future Electronics
Hafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospect
Programmable Read-Only Memory (PROM)
NRAM: a disruptive carbon-nanotube non-volatile resistance-change memory
Photonic Non-volatile Memory
PART III: REDOX-BASED EMERGING NON-VOLATILE MEMORY DEVICES
Conductive Bridge Random Access Memory (CBRAM) Devices - Materials, Filament Scaling, and Performance
OxRAM
Modeling and HRRAM
Two-dimensional (2D) Materials for Scalable Resistive Switching Devices
Reliability & Variability of emerging NVM
Productization of ReRAM, from concept to market
PART IV: SELECTOR DEVICES, AND CHARACTERIZATION TECHNIQUES
Electrical characterization, modeling, and simulation of HfO2-based CRS devices
Switching Dynamics of Ag- and Cu-based Diffusive Memristors
Amorphous chalcogenide-based threshold switches for selector and memory applications
Strategies for the nanoscale characterization of volatile and non-volatile filaments
PART V: APPLICATIONS OF EMERGING NON-VOLATILE MEMORY DEVICES
Emerging Devices for Neuromorphic Sensing and Computing
Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications
Accelerating Algorithms using Emerging Non-volatile Memory Subsystems for Edge Computing
Hardware Security using Emerging Non-volatile Memories
Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond
Emerging Memristive Electrochemical Ion-Diffusion Devices for RF Applications
Introduction
3-D NAND Flash memories: technological evolution and prospective applications
NAND Flash Revolution: Conquering Reliability and Variability in the 2D to 3D Transition
Two-Dimensional Materials for Future Transistors
PART II: NON-VOLATILE MEMORY BASED ON VARIOUS MECHANISMS
Phase-Change Memory
Magnetic Random Access Memory: Past, Present and Future
Ferroelectric Fundamentals Unraveling the Science of HfO2 for Future Electronics
Hafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospect
Programmable Read-Only Memory (PROM)
NRAM: a disruptive carbon-nanotube non-volatile resistance-change memory
Photonic Non-volatile Memory
PART III: REDOX-BASED EMERGING NON-VOLATILE MEMORY DEVICES
Conductive Bridge Random Access Memory (CBRAM) Devices - Materials, Filament Scaling, and Performance
OxRAM
Modeling and HRRAM
Two-dimensional (2D) Materials for Scalable Resistive Switching Devices
Reliability & Variability of emerging NVM
Productization of ReRAM, from concept to market
PART IV: SELECTOR DEVICES, AND CHARACTERIZATION TECHNIQUES
Electrical characterization, modeling, and simulation of HfO2-based CRS devices
Switching Dynamics of Ag- and Cu-based Diffusive Memristors
Amorphous chalcogenide-based threshold switches for selector and memory applications
Strategies for the nanoscale characterization of volatile and non-volatile filaments
PART V: APPLICATIONS OF EMERGING NON-VOLATILE MEMORY DEVICES
Emerging Devices for Neuromorphic Sensing and Computing
Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications
Accelerating Algorithms using Emerging Non-volatile Memory Subsystems for Edge Computing
Hardware Security using Emerging Non-volatile Memories
Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond
Emerging Memristive Electrochemical Ion-Diffusion Devices for RF Applications
Writam Banerjee is working as the Principal Engineer of technology development for emerging non-volatile memories (NVM) at GlobalFoundries Dresden, Germany. Having obtained his academic degrees in physics and semiconductor devices, he spent almost 15 years working in academic positions for emerging NVM devices before joining his current role at GlobalFoundries. Dr. Banerjee has authored over 100 scientific publications and has received several awards in his career.