Principles of Semiconductor Processes and Device Technology
1. Edition June 2026
352 Pages, Hardcover
244 Pictures (116 Colored Figures)
Professional Book
Short Description
Systematically summarizes the content of semiconductor physics, material characterization, device physics, device characterization, semiconductor processing technologies.
From fundamental physics to frontier devices in semiconductor technology
Semiconductor devices underpin modern electronics, from power systems to optical sensors and light emitters. Principles of Semiconductor Processes and Device Technology delivers detailed coverage spanning fundamental physics through advanced fabrication techniques. Written by professors Zhigang Zang and Qingkai Qian of Chongqing University, this reference connects semiconductor physics with practical device development for researchers and engineers.
The book covers semiconductor physics, synthesis and characterization of optoelectronic materials, and fabrication processes. Focused chapters address transistors, luminescent materials and devices, superluminescent diodes, solar cells, photodetectors, and graphene devices. Technical details and frontier research results support professionals developing new semiconductor devices across academic and industrial settings.
Readers will also find:
* Clear explanations of fabrication, characterization, and operation principles for various semiconductor device types from foundational concepts to advanced applications
* Specific technical details and research frontier results enabling practitioners to develop innovative luminescent devices, solar cells, and photodetectors
* Coverage of graphene-based devices and their related optical property investigations grounded in first-principle calculations and experimental validation
* Practical knowledge combining semiconductor process principles with device technology for both academic research and industrial product development
* Detailed treatment of optoelectronic materials synthesis and characterization methods essential for modern semiconductor device engineering and design
Designed for materials scientists, electronics engineers, semiconductor physicists, and graduate students in physics and materials sciences, this reference provides the depth required for device design and product development practitioners. Academic and industrial professionals will find it invaluable for understanding and advancing semiconductor technology.
1.1 Introduction
1.2 Properties of Semiconductors
1.3 Crystal Structure and Types of Semiconductors
1.4 Carrier Transport
1.5 Doping Process
1.6 Energy Band Theory
1.7 PN Junctions
CHAPTER 2: SYNTHESIS AND CHARACTERIZATION OF OPTOELECTRONIC MATERIALS
2.1 Introduction
2.2 Synthesis of Semiconductors
2.3 Characterization
CHAPTER 3: EUV LITHOGRAPHY PROCESS OF SEMICONDUCTOR DEVICES
3.1 Introduction
3.2 EUV Lithography System and Working Principles
3.3 Development of Resist for EUV Lithography
3.4 Mask Materials and Designs for EUV Lithography
3.5 Conclusions and Perspectives
CHAPTER 4: TRANSISTORS
4.1 Bipolar Transistors
4.2 Field-Effect Transistors
4.3 Thin-Film Transistors
CHAPTER 5: LUMINESCENT MATERIALS AND DEVICES
5.1 Introduction
5.2 Principle of Semiconductor Luminescence
5.3 Structure and Feature of LEDs
5.4 Process of LEDs
5.5 GaN LEDs
5.6 Perovskite LEDs
5.7 White LEDs
CHAPTER 6: SUPERLUMINESCENT LIGHT EMITTING DIODES
6.1 Introduction
6.2 History of SLED
6.3 Principle of Active-MMI SLED
6.4 Merit and Results of Active-MMI SLED
CHAPTER 7: SOLAR CELLS
7.1 Introduction
7. 2 Basic Principles of Solar Cells
7.3 Typical Solar Cells
7.4 Manufacturing of Solar Cells
7.5 Applications of Solar Cells
7.6 Conclusion
CHAPTER 8: PHOTODETECTORS
8.1 Introduction
8.2 Principle of Photodetectors
8.3 General Metrics of Photodetectors
8.4 Perovskite Photodetectors
8.5 Metal-Semiconductor-Metal Photodetectors
8.6 Organic Photomultiplication Detectors
CHAPTER 9: GRAPHENE AND GRAPHENE-BASED DEVICES
9.1 Introduction
9.2 Structure and Properties of Graphene
9.3 Preparation Methods of Graphene
9.4 Graphene-Based Devices
9.5 Future of Graphene-Based Devices
Qingkai Qian (Associate Professor) received his B.S. and M.S. degrees, both in physics from Tsinghua University, Beijing, China, in 2012 and 2014, respectively. He obtained his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology, Hong Kong SAR, China in 2018. He was as a postdoctoral researcher in Department of Electrical Engineering, The Pennsylvania State University from 2019 to 2020. He joined College of Optoelectronic Engineering, Chongqing University in 2021, and currently is an Associate Professor. His research interests are the optoelectronic devices based on perovskites, low-dimensional materials, and their related optical property investigations based on first-principle calculations. He is currently young editorial board member of Rare Metals and Vacuum.