VLSI Fabrication Principles
Silicon and Gallium Arsenide
2. Edition April 1994
864 Pages, Hardcover
Wiley & Sons Ltd
ISBN:
978-0-471-58005-8
John Wiley & Sons
VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits.
Material Properties.
Phase Diagrams and Solid Solubility.
Crystal Growth and Doping.
Diffusion.
Epitaxy.
Ion Implantation.
Native Films.
Deposited Films.
Etching and Cleaning.
Lithographic Processes.
Device and Circuit Fabrication.
Appendix.
Index.
Phase Diagrams and Solid Solubility.
Crystal Growth and Doping.
Diffusion.
Epitaxy.
Ion Implantation.
Native Films.
Deposited Films.
Etching and Cleaning.
Lithographic Processes.
Device and Circuit Fabrication.
Appendix.
Index.
Sorab K. Ghandhi is a professor Emeritus at Rensselaer Polytechnic Institute known for his pioneering work in electrical engineering and microelectronics education, and in the research and development of Organometallic Vapor Phase Epitaxy for compound semiconductors.