Properties of Advanced Semiconductor Materials
GaN, AIN, InN, BN, SiC, SiGe
1. Edition January 2001
216 Pages, Hardcover
Wiley & Sons Ltd
Short Description
Several advanced semiconductor materials are now in the forefront of semiconductor research. These materials include different polytypes of SiC, SiGe alloys, and nitrides, such as GaN, InN, AIN, and BN. Each of these materials has many applications in the power industry, microwave industry, consumer products, medicine, and defense.
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.
* Reviews traditional semiconductor materials as well as new, advanced semiconductors.
* Essential authoritative handbook on the properties of semiconductor materials.
Preface.
Gallium Nitride (GaN) (V. Bougrov, et al.).
Aluminum Nitride (AIN) (Y. Goldberg).
Indium Nitride (InN) (A. Zubrilov).
Boron Nitride (BN) (S. Rumyantsev, et al.).
Silicon Carbide (SiC) (Y. Goldberg, et al.).
Silicon-Germanium (Si_1-xGe_x) (F. Schäffler).
Appendix 1: Basic Physical Constants.
Appendix 2: Periodic Table of the Elements.
Appendix 3: Rectangular Coordinates for Hexagonal Crystal.
Appendix 4: The First Brillouin Zone for Wurtzite Crystal.
Appendix 5: Zinc Blende Structure.
Appendix 6: The First Brillouin Zone for Zinc Blende Crystal.
Additional References.
"Anyone working with these materials will find the up-to-date information summarized in this handbook extremely useful and handy...this handbook has the potential to become on of the most cited reference books in upcoming years." (MRS Bulletin, September 2001)
